Extended Data Fig. 5: Transfer characteristics of phototransistors fabricated on rigid SiO2 substrates with scaled-down channel lengths (Lch = 2, 5, 10, 15, and 20 μm, Wch = 1.5 mm), demonstrating high device-to-device uniformity and enhanced photocurrent generations. | Nature Nanotechnology

Extended Data Fig. 5: Transfer characteristics of phototransistors fabricated on rigid SiO2 substrates with scaled-down channel lengths (Lch = 2, 5, 10, 15, and 20 μm, Wch = 1.5 mm), demonstrating high device-to-device uniformity and enhanced photocurrent generations.

From: Stretchable colour-sensitive quantum dot nanocomposites for shape-tunable multiplexed phototransistor arrays

Extended Data Fig. 5

Transfer characteristics of phototransistors fabricated on rigid SiO2 substrates with scaled-down channel lengths (Lch = 2, 5, 10, 15, and 20 μm, Wch = 1.5 mm), demonstrating high device-to-device uniformity and enhanced photocurrent generations.

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