Extended Data Fig. 2: AFM images of 2D In₂S₃ grown on WS₂.

(a-e) The AFM images of 2D-In₂S₃ crystals with different thicknesses grown on monolayer WS₂ substrates. (f-g) The statistical histograms of the In₂S₃ nanoflakes thickness (measured on 50*50 μm² WS₂ templates). The thickness of In₂S₃ crystals can be controlled by tuning of the evaporation of InI sources. For the growth of 1 nm In₂S₃, 10 mg InI was used as the precursor. The growth temperature of 280 °C was held for 6 min under 60 sccm Ar. The thickness of In₂S₃ flakes increases with more InI precursors in the growth process. For the growth of 2–4 nm In₂S₃, 15–25 mg InI sources and 55-15 sccm Ar were used for growth 8 min. For the growth of more than 10 nm of In₂S₃, 30 mg InI sources and 20 sccm Ar were used to maintain 10 min in the growth process. The panels f-g show the static distribution of In₂S₃ nanoflakes thickness in two growth conditions (measured on 50*50 μm² TMD templates). The statistical results of MC nanoflakes suggest that the thickness of MC can be modulated by adjusting the deposition parameters.