Extended Data Fig. 4: Magnetic-field interference pattern of the Cu JJ-based SQUID.

a, Estimated electrical resistivity versus temperature T plot for the Cu(40 nm)/Ru(5 nm) reference Hall-bar device. b, Total critical current \(I_c^{tot}\) versus μ0H⊥ plot for the Cu JJ-based SQUID, taken at T = 2 K. Here μ0H⊥ is applied perpendicular to the interface plane of Nb electrodes, as illustrated in the bottom inset. The top left inset displays the zero-field current-voltage I-V curve at 2 K whereas the top right inset shows the I-V curve near the zero-order minimum of \(I_c^{tot}\)(μ0H⊥). To focus on a full modulation of \(I_c^{tot}\) caused by the magnetic-field quantum interference of two Nb/Cu/Nb lateral JJs, we measure the \(I_c^{tot}\)(μ0H⊥) curves at a rather large interval (1 mT) of μ0H⊥. The black solid lines in b are fitting curves20 to determine the supercurrent non-uniformity γ and the effective junction area AeffJJ. The error bars in b represent the standard deviation.