Extended Data Fig. 3: Electrical performance of different channel length devices. | Nature Nanotechnology

Extended Data Fig. 3: Electrical performance of different channel length devices.

From: Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer

Extended Data Fig. 3

a, Output characteristics (Id-Vd) of the PPC-Bi device on the h-BN substrate (h-BN/MoS2/h-BN) for different channel lengths at 300 K, Vg = 0 V. b, Id-Vd of the PPC-Bi device for different channel lengths at 15 K, Vg = 0 V. c, RT - LCH plot for different device types under different conditions at Vg = 0 V. h-BN-PPC-Bi device on the h-BN substrate (h-BN/MoS2/h-BN) shows RC of ~90 Ω-µm at 15 K and ~115 Ω-µm at 300 K. PPC-Bi device on the SiO2 substrate (SiO2/MoS2/h-BN) shows RC of ~114 Ω-µm (300 K). In contrast, the PMMA-Bi device on the SiO2 substrate (SiO2/MoS2/h-BN) shows the highest RC of ~142 Ω-µm (300 K) at Vg = 0 V condition. Inset, false color SEM image of the TLM structure with a scale bar of 1 µm.

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