Fig. 5: Subthreshold swing of a QI-enhanced transistor.
From: Quantum interference enhances the performance of single-molecule transistors
a, Normalized subthreshold swing at Vsd = 20 mV as a function of temperature (red circles; see Supplementary Figs. 5-1–5-9 for Ss-th calculation), plotted with the thermionic limit for a classical field-effect transistor (grey), and simulated subthreshold swing for a single-level molecular Breit–Wigner resonance without DQI (blue). b, Isd as a function of αgVg around the N – 1/N resonance; the yellow curves are experimental and the blue curves are the simulations of a Breit–Wigner resonance. The ranges to calculate the subthreshold swing are the steepest parts of the curves and are highlighted (red for experimental and blue for simulated) and demonstrate the effect of DQI to increase the magnitude of the gradient of the N state current, thereby reducing Ss-th to the thermionic limit.
