Extended Data Fig. 7: Cycling endurance and thermal robustness of resistive switching in the memristor device. | Nature Nanotechnology

Extended Data Fig. 7: Cycling endurance and thermal robustness of resistive switching in the memristor device.

From: Ultrawide-bandwidth boron nitride photonic memristors

Extended Data Fig. 7

(a) Evolution of resistance for the high-resistance state (HRS) and low-resistance state (LRS) over approximately 2 million cycles at 20 °C, with no significant degradation observed. The HRS remains stable at around 109 Ω, with slight fluctuations due to measurement precision, while the LRS is stabilized at approximately 7 × 107 Ω. The switching ratio remains ~10, demonstrating a stable and robust high/low resistance window throughout the endurance test. (b) Endurance testing at 125 °C, showing that the device maintains stable switching behavior over millions of cycles at elevated temperatures. The HRS and LRS values remain relatively stable, confirming excellent thermal stability and consistent resistive switching performance.

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