Extended Data Fig. 6: The hysteric dependence of the tunnelling current of the F3GT/CIPS/F3GT MFTJ on the pulse writing voltage.
From: Tailorable multiferroic tunnel junctions from all-van der Waals multilayer stacking
The tunnelling currents are measured by a −0.2 V d.c. reading voltage at room temperature after each attempted pulse writing voltage. The tunnelling currents show a square-shaped hysteresis loop as a dependence on the pulse writing voltages. Specifically, the pulse voltages of ±6 V switch the tunnelling currents in the MFTJ between ON and OFF states, confirming the FE switching of 2D CIPS and the non-volatile control of the tunnelling current.
