Extended Data Fig. 7: FE hysteresis loops of a 44-nm-thick In2Se3 flake on a bulk F3GT flake.
From: Tailorable multiferroic tunnel junctions from all-van der Waals multilayer stacking
The structure of this In2Se3/F3GT heterostructure is similar to the one in Extended Data Fig. 5a. Red and blue curves represent the out-of-plane PFM phase and amplitude as functions of the applied voltage between the PFM tip and the bottom Au electrode, respectively. FE hysteresis loops of the In2Se3 flake on the metallic F3GT flake show clear FE polarization switching under opposite applied electric voltages. The coercive voltage of the In2Se3 flake is ~2.5 V, which is consistent with the previous report55.
