Extended Data Fig. 8: DFT calculated density of states (DOS) for F3GT/CIPS and F3GT/In₂Se₃ heterostructures under opposite FE polarizations.

a, DOS of monolayer F3GT (blue) and CIPS (red) under upward (up panel) and downward (bottom panel) FE polarizations. Fermi levels lie within the bandgap in both cases, indicating that the contacts between F3GT and CIPS are Schottky contacts under both FE polarizations. b, DOS of monolayer F3GT (blue) and In₂Se₃ (yellow) under upward (up panel) and downward (bottom panel) FE polarizations. Under the upward FE polarization, the contact between F3GT and In₂Se₃ is a Schottky contact, while the downward FE polarization forms an Ohmic contact between F3GT and In₂Se₃. Under the downward FE polarization, the zoomed-in inset of the bottom panel shows the calculated Fermi level located in the conduction band of In₂Se₃. Therefore, the ON-state current densities of F3GT/In₂Se₃/F3GT MFTJs are higher than those of F3GT/CIPS/F3GT MFTJs by a factor of 100 in our experimental results, possibly due to the reduced contact resistance between FE and FM materials when CIPS is replaced by In₂Se₃.