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Synthetic antiferromagnetic spintronics

Nature Physics volume 14, pages 217–219 (2018)Cite this article

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A Publisher Correction to this article was published on 18 June 2018

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Abstract

Spintronic and nanomagnetic devices often derive their functionality from layers of different materials and the interfaces between them. We discuss the opportunities that arise from synthetic antiferromagnets consisting of two or more ferromagnetic layers that are separated by metallic spacers or tunnel barriers and have antiparallel magnetizations.

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Fig. 1: Schematic of synthetic antiferromagnets.

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  • 18 June 2018

    Owing to a technical error, this Perspective was originally published without its received and accepted dates in the HTML version; the dates “Received: 30 May 2017; Accepted: 17 January 2018” have now been included. The PDF is correct.

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Acknowledgements

R.A.D. is supported by the Stichting voor Fundamenteel Onderzoek der Materie (FOM), the European Research Council (ERC), and is part of the D-ITP consortium, a program of the Netherlands Organization for Scientific Research (NWO) that is funded by the Dutch Ministry of Education, Culture and Science. K.-J.L. was supported by the National Research Foundation of Korea (NRF) (NRF-2015M3D1A1070465, NRF-2017R1A2B2006119). This work was in part supported by EU FET Open RIA Grant no. 766566.

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Authors and Affiliations

  1. Institute for Theoretical Physics, Universiteit Utrecht, Utrecht, The Netherlands

    R. A. Duine

  2. Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands

    R. A. Duine

  3. Department of Materials Science and Engineering, Korea University, Seoul, Korea

    Kyung-Jin Lee

  4. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, Korea

    Kyung-Jin Lee

  5. Max Planck Institute for Microstructure Physics, Halle (Saale), Germany

    Stuart S. P. Parkin

  6. IBM Research — Almaden, San Jose, CA, USA

    Stuart S. P. Parkin

  7. Institute of Physics, Martin Luther University Halle-Wittenberg, Halle (Saale), Germany

    Stuart S. P. Parkin

  8. Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, USA

    M. D. Stiles

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  1. R. A. Duine
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  2. Kyung-Jin Lee
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  4. M. D. Stiles
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Correspondence to R. A. Duine.

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Duine, R.A., Lee, KJ., Parkin, S.S.P. et al. Synthetic antiferromagnetic spintronics. Nature Phys 14, 217–219 (2018). https://doi.org/10.1038/s41567-018-0050-y

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