Extended Data Fig. 5: Effect of TR on the left-side-only ZBCP in Fig. 3 and effect of T3.
From: Non-Majorana states yield nearly quantized conductance in proximatized nanowires
a and b, Differential conductance GL and GR as functions of TR voltage and S-gate voltage at zero field and zero bias when TL is set to -0.04 V. This is the regime where we find the nearly quantized ZBCP on the left side in Fig. 2. The two sides show distinct states, which confirms the finding that there are only localized states in this regime. c and d, Differential conductance GL and GR as functions of source-drain voltage and TR voltage at 1 T. While the TR pinch off the right side, the ZBCP on the left side remains unchanged with conductance close to 2e2/h. Notably, there are also states near zero bias on the right side when TR is below -0.05 V. However, they never form a ZBCP. The two wider barrier gates are connected and controlled by a single voltage T3. For all other measurements in this paper, T3 is set to above 1.5 V to facilitate high transparency. Here we present the effect of T3. e and f, Differential conductance GL and GR as functions of S-gate voltage and T3 voltage at zero bias and zero magnetic field, while S-gate = 1 V, TL = -0.15 V and TR = 0.1 V. The resonances we observed in S-gate scans show no considerable gate dependence of T3, indicating the associated wavefunctions live far away from T3. T3 also tune different sets of resonances on the left and the right side, which can also be seen in the source-drain voltage vs.T3 scans (panel g and h).The gate settings are S-gate = 1 V, TL= -0.1 V and TR= 0.075 V. Those states show no considerable gate dependence on S-gate, indicating the existence of more dots above T3.
