Extended Data Fig. 2: Additional MIM data in device D1.
From: Correlated insulating states at fractional fillings of the WS2/WSe2 moiré lattice
a, MIM-Im vs gate voltage traces for both sweeping directions in device D1 at T = 4 K. b, MIM-Im vs gate voltage traces with extended gate range from −7 V to 6 V taken at T = 3 K. The feature near −5 V likely correponds to n = −2 state. However, due to poor electrical contact at high hole doping, this feature is not stable and its gate position is not repeatable at different spots.
