Extended Data Fig. 3: Spatial uniformity of sample conductivity in device D1.
From: Correlated insulating states at fractional fillings of the WS2/WSe2 moiré lattice
a,b Optical image and atomic force microscopy (AFM) image of device D1. c, MIM-Im image at Vg = −2 V scanned over the region marked by the rectangles in (a) and (b). d, MIM-Im images taken at different gate voltages marked along the top axis in (e). e, MIM-Im vs gate traces taken at spots A-F as indicated in (c). All MIM data are taken at T = 10 K. Scale bars are 2 μm.
