Extended Data Fig. 5: Device B2 Finite Bias Spectroscopy. | Nature Physics

Extended Data Fig. 5: Device B2 Finite Bias Spectroscopy.

From: One-dimensional Kronig–Penney superlattices at the LaAlO3/SrTiO3 interface

Extended Data Fig. 5

a, Conductance G intensity map as a function of four-terminal voltage V4t and side gate voltage Vsg. Pink and blue dashed lines indicate the locations for the vertical linecuts shown in c. b, Transconductance (dG/dVsg) intensity map as a function of four-terminal voltage V4t and side gate voltage Vsg. The transconductance map shows the diamond features indicating ballistic transport in the superlattice devices. c, Vertical conductance linecuts at V4t=0 and 121 μV. Circles indicate fractional conductance values below the 2e2/h plateau (corresponding to the lowest diamond features visible in the transconductance map in panel b) that become half of their value at a finite bias. Curves are offset for clarity. Data shown is from Device B2 and taken at B = 9 T and T=50 mK.

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