Extended Data Fig. 7: Effects of reducing the area of D2 device.
From: Topological charge density waves at half-integer filling of a moiré superlattice
a, Etching the device to reduce the active area of the device. Further Ryx and Rxx are measured between pairs of contacts (b,e) and (f,e) respectively. b,c,e,f, Comparison of Ryx (b,c) and Rxx (e,f) measured near ν= 7/2 before and after etching the device. Panels b and e show the same data that in Fig. E6, while the data shown in c and f was measured at D= 0.456 V/nm. The lines are guides for eye that correspond to C= ± 1 states. d Magnetic hysteresis measured near ν = 7/2 before and after etching show strong enhancement of Ryx jump at zero field. g,h,i Traces of Ryx (g) and Rxx (h,i) at selected fields which are indicated in panels. Plateau in Rxy and a dip in Rxx as a function of carrier density persist down to zero field.
