Extended Data Fig. 6: Line cuts of 2s exciton signal in the Mott insulator and correlated interlayer exciton insulator.
From: Correlated interlayer exciton insulator in heterostructures of monolayer WSe2 and moiré WS2/WSe2
a, Reflection contrast spectra in the Mott insulator (E = 80 mV nm−1) and correlated interlayer exciton insulator (E = 0, −4, and −8 mV nm−1). b, Derivative reflection contrast spectra in the Mott insulator (E = 80 mV nm−1) and correlated interlayer exciton insulator (E = 0, −4, and −8 mV nm−1). It clearly shows that the WSe2 2s exciton feature decreases in amplitude at p/p0 = 1 with a reduced vertical electric field (increased hole doping in the WSe2 monolayer). The WSe2 2s exciton amplitudes of the interlayer exciton insulator states (E = 0, −4, and −8 mV nm−1) are weaker than that of the Mott insulator (E = 80 mV nm−1).
