Extended Data Fig. 8: Estimation of critical interlayer exciton density.
From: Correlated interlayer exciton insulator in heterostructures of monolayer WSe2 and moiré WS2/WSe2
a–c, WSe2 monolayer trion intensity (a), Derivative of interlayer exciton PL intensity with respect to gates induced hole density \(dI_{IX}/\left[ { - \frac{1}{e}\left( {C_{t1}V_t + C_{b1}V_b} \right)} \right]\) (b), and WSe2 monolayer 2s exciton intensity (c) as a function of the gates induced hole density \(- \frac{1}{e}\left( {C_{t1}V_t + C_{b1}V_b} \right)\) and vertical electric field E. The same figures are plotted in Fig. 3a–c, in the main text. The critical point is labeled as point X, where the correlated interlayer exciton insulator starts to melt, as shown in c. The dashed black line in a denotes states with the same trion PL intensity as, and therefore similar pmono to, the X point. The dashed green line in b corresponds to the Mott insulator in the moiré bilayer (pmoiré/p0 = 1), which is determined by the maximum of \(dI_{IX}/\left[ { - \frac{1}{e}\left( {C_{t1}V_t + C_{b1}V_b} \right)} \right]\) in b. The carrier density in the WSe2 monolayer pmono along this green dashed line can be calculated as pmono = p – pmoiré. The intersection of the dashed blue line and the dashed green line is around p/p0 = 1.5. The hole density in the WSe2 monolayer is pmono = p – pmoiré = 1.5 p0 – p0 = 0.5 p0 at the intersection. Point X should have a similar pmono because it has the same trion intensity. Therefore, the critical interlayer exciton density at point X is nX = pmono ≈ 0.5 p0.
