Extended Data Fig. 6: Numerical simulations and comparison measurements on the impact of the residual exchange. | Nature Physics

Extended Data Fig. 6: Numerical simulations and comparison measurements on the impact of the residual exchange.

From: Coherent spin–valley oscillations in silicon

Extended Data Fig. 6

a,b Numerical simulations corresponding to Fig. 3c in the main text. In both cases, the state is prepared and measured along \(\left\vert \widetilde{{\downarrow }^{+}{\uparrow }^{-}}\right\rangle\). a Simulation assuming Jr = 0 and η = 0. b Simulation assuming Jr=0.5 MHz and η=0.0167. c,d Measurements corresponding to Figs. 3e,f in the main text, taken in a separate cooldown where the device was tuned differently. e,f Same measurements as in c and d, respectively, but conducted with a voltage pulse of -30 mV applied to the barrier gate between the two quantum dots. The feature visible in c and d near ϵ=26 mV vanishes.

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