Extended Data Fig. 6: Drag resistances in different G-LAO-STO devices.
From: Josephson–Coulomb drag effect between graphene and a LaAlO3/SrTiO3 superconductor
a,b, Rdrag and RLAO/STO as functions of T for Devices #2 and #3, respectively. Insets: enlarged-views of the RLAO/STO vs T curves. For Device #3, non-zero Rdrag is obtained even at the lowest measuring temperature, which is consistent with the fact that the LAO/STO interface acting as the drag layer does not enter into the fully SC state.
