Extended Data Fig. 3: Negligible impact of the interlayer-gate voltage on the electronic performance of LAO/STO interface.
From: Josephson–Coulomb drag effect between graphene and a LaAlO3/SrTiO3 superconductor
a, Schematic illustration of the interlayer-gate voltage (Vint) tuning. b, RLAO/STO as a function of Vint measured at 100 mK and 400 mK. In contrast to graphene (Fig. 1c in the main text), the impact of Vint on the electronic performance of LAO/STO interface is negligible. This is due to the fact that the typical carrier density of the LAO/STO interface is orders of magnitude higher than that of the graphene layer near the Dirac point.
