Extended Data Fig. 7: Tight-binding model calculations.
From: Realization of the Haldane Chern insulator in a moiré lattice
a-c, Band structure simulated using the tight-binding Hamiltonian described in Methods. Red and blue curves denote the spin-up and spin-down bands, respectively. Under zero magnetic field (a), the bands are inverted at both the \({\rm{K}}\) and \({{\rm{K}}}^{{\prime} }\) valleys. This is a QSH insulator (QSHI). Under a small magnetic field (b), the bands in the \({{\rm{K}}}^{{\prime} }\) valley cross at one momentum. Under a sufficiently high magnetic field (c), the gap changes sign for the \({{\rm{K}}}^{{\prime} }\) valley; this is a Chern insulator. d, The direct band gap near the \({\rm{K}}/{{\rm{K}}}^{{\prime} }\) valleys as a function of the Zeeman energy and the sublattice/interlayer potential difference. The three symbols mark the phase space for which the electronic band structure is represented in a-c, respectively.
