Extended Data Fig. 3: Magneto-transport in Device 1 at 1.6 K.
From: Realization of the Haldane Chern insulator in a moiré lattice
a, b, Hall resistance as a function of the top and bottom gate voltages at B = 3 T (a) and of the magnetic field and filling factor at \(E={E}_{c}\) (b). The orange dashed line in a corresponds to \(E={E}_{c}\). The green dashed line in b marks the \({R}_{{\rm{xy}}}\) maximum. We determine the slope of the dashed lines to be \({n}_{{\rm{M}}}\frac{dv}{dB}=c\frac{e}{h}\) with c = 1.1 ± 0.1. Right inset shows the magnetic-field dependence of \({R}_{{\rm{xy}}}\) along the green dashed line.
