Extended Data Fig. 2: Gate-level noise simulations.
From: Programmable simulations of molecules and materials with reconfigurable quantum processors
(a)-(c) Time evolution of the correlations \({D}_{R}^{A}(t)\) for a polarized reference state \(\left\vert S\right\rangle =\left\vert 0\right\rangle\) and A chosen to be projectors onto different Sz sectors. This involves measuring operators of fixed weight. We see that the simulation of gate-level noise modelled as a depolarizing channel with a gate error probability p = 0.001 (orange dash dotted curve) matches well with the dynamics obtained by adding an additional phenomenological noise \(\propto \exp (-\gamma t)\) with rate γ = (0.128, 0.251, 0.36) for Nspin flip = (1, 4, 8) (solid yellow lines) to the loss-less time evolution \({D}_{R,{\rm{Floquet}}}^{\,A}\) (green dashed). (d) Relationship between the optimal phenomenological noise rate γ and the gate error probability p for different spin flip sectors. We see a roughly linear-relationship of the decay rate γ with the gate error rate p and operator weight Sz. All data are obtained using time-steps Jτ = 0.05.
