Fig. 2: Polarization and photon energy dependencies of the (8 × 2) to (4 × 1) switching efficiency.
From: Valley-controlled photoswitching of metal–insulator nanotextures
a, LEED image and real-space sketch of parallel-oriented indium atomic wires on a stepped Si wafer surface with a 2° miscut relative to the (111) plane. b, Polarization-dependent switching efficiency for increasing photon energy, at the maximum diffraction spot suppression (1 – I(8 × 2)Δt = 40 ps/I(8 × 2)Δt = −150 ps). The in-plane electric-field component is depicted relative to the nanowire direction. Incident fluences (from left to right): 1.04 mJ cm–2, 0.59 mJ cm–2, 0.62 mJ cm–2, 1.09 mJ cm–2 and 1.40 mJ cm–2.
