Extended Data Fig. 9: Optoelectronic characteristics of perovskite LED devices fabricated with different amino acids in the precursor solution.
From: Perovskite light-emitting diodes based on spontaneously formed submicrometre-scale structures
a, SEM image of submicrometre-structured perovskites fabricated with 6ACA (chemical structure shown in white). The scale bar represents 1 μm. Inset, FFT pattern in a randomly selected region. The P range of 6ACA is 265–901 nm, yielding a calculated outcoupling efficiency of 28.9% ± 2.5%. b, SEM image of submicrometre-structured perovskites fabricated with 7AHA (chemical structure shown in white). The scale bar represents 1 μm. Inset, FFT pattern in a randomly selected region. The P range of 7AHA is 432–1,430 nm, yielding a calculated outcoupling efficiency of 26.4% ± 3.3%. c, Excitation-intensity-dependent PLQE. The perovskite films with 6ACA and 7AHA have similar PLQEs. d, Dependence of current density and radiance on the driving voltage. e, EQE versus current density. The 6ACA- and 7AHA-based devices reach peak EQEs of 18.2% and 17.3%, respectively. Given that the perovskite films based on 6ACA and 7AHA have similar PLQEs, the EQEs must be affected mainly by the different outcoupling efficiencies that result from the different periodicities of the submicrometre-scale structures. f, Electroluminescence spectra.
