Extended Data Fig. 8: Synthesis of mesoscale twisted GeSe using dislocated GeS nanowires as seeds.
From: Helical van der Waals crystals with discretized Eshelby twist
a, Schematic showing the synthesis of mesoscale twisted GeSe structures. Twisted GeS nanowires were first grown via the VLS method. In a second growth, GeSe was deposited on the GeS nanowires using the chemical vapour transport method. b, Optical image of dislocated GeS nanowires. c, Optical image of mesoscale twisted structures synthesized through depositing GeSe on those twisted GeS nanowires. d, e, SEM images of twisted GeSe structures at low magnification (d) and at high magnification (e). f, SEM image (left) and corresponding EDS elemental maps of the structure. Quantitative chemical analysis using EDS suggests an almost 1:1 atomic ratio of Ge to Se.
