Extended Data Fig. 9: Transfer of twisted GeS crystals to other substrates.
From: Helical van der Waals crystals with discretized Eshelby twist
a, Schematic showing a facile processing scheme to transfer twisted GeS crystals to other substrates. i, Twisted crystals were first grown on a thermally oxidized Si/SiO2 substrate. These crystals adhered well to the substrate. ii, Polymethyl methacrylate (PMMA) was applied on the substrate. iii, The SiO2 layer was etched using hydrofluoric acid, and the crystals were transferred to the PMMA film. iv, The PMMA film with the crystals was brought into contact with another substrate. v, The GeS crystals were transferred to the substrate by dissolving PMMA in acetone. b, SEM images of the GeS crystals after the transfer. Scale bar, 4 μm.
