Extended Data Fig. 5: Effect of the plunger gate on transport characteristics.
From: Imaging work and dissipation in the quantum Hall state in graphene
a, An optical image of device B with the measurement circuit shown. b, Four-probe measurements of Hall conductance \({\sigma }_{yx}={R}_{yx}/({R}_{xx}^{2}+{R}_{yx}^{2})\) and Rxx against back-gate voltage Vbg for different Vpg values at Bz = 0.9 T and Iac = 50 nA at 93.72 Hz. A voltage of 3 V was applied to the two plunger gates on the right edge and \(-\)3 V was applied to the top plunger gate on the left edge. In this configuration the nontopological quantum Hall channels on the right edge of the sample are cut off, giving rise to enhanced \({R}_{xx}\) response on the left edge upon varying Vpg. c, Rxx plotted against Vbg from b plotted on a logarithmic scale. d, Values from the four-probe measurement of Rxx plotted against Vpg at Vbg = −1 V (dashed line in c).
