Extended Data Fig. 10: Landau fan diagram overlaid on experimental data for different choices of gate voltages corresponding to ν = ±4.

a, LDOS Landau fan with the same gate voltages V_ν=−4 and V_ν=4, corresponding to ν = ±4, as in Fig. 2c. The same gate voltages (V_ν=−4 = −5.6 V and V_ν=4 = 6.2 V) are used in b and d. b, c, LDOS Landau fan zoomed-in around the hole-side dispersive band with different choice of gate voltages. The choice in c (V_ν=−4 = −5.7 V and V_ν=4 = 6.2 V) does not reproduce the data well. d, e, Similar comparison around the CNP, where e corresponds to V_ν=−4 = –5.7 V and V_ν=4 = 6.3 V. From this comparison, we extract the error in determining ν = ±4 to be 0.1 V. All LDOS data are normalized by an average LDOS value for each magnetic field. f, Linecut of the LDOS fan in a along the LL filling of −2 emanating from ν = −2, averaged over a V_gate window of 0.04 V. The state above B = 6 T that we identify as a Chern insulating phase is distinguished from half-filling LLs by the abrupt drop in LDOS.