Extended Data Fig. 6: Effective electron temperature of the isolated QD unit cell.
From: Operation of a silicon quantum processor unit cell above one kelvin
a, Charge occupation probability around the (2, 4)–(3, 3) charge transition, measured through ISET using a triangular wave with a peak-to-peak voltage of ΔVGp–p = 8 mV applied to ΔVG. δΔVG is the rebiased ΔVG value for which the fitted charge transitions occur at 0 V. The solid lines are fits to the Fermi distribution, which we use to extract the effective electron temperature as a function of mixing chamber temperature. b, Effective electron temperatures extracted from a. The effective temperature is calculated using the lever arm from Extended Data Fig. 7. The minimum effective electron temperature is ~250 mK at low mixing chamber temperatures. At higher temperatures, the effective electron temperature is equal to the mixing chamber temperature. Measured at B0 = 0 T. Error bars represent the 95% confidence level.
