Extended Data Fig. 2: Normalized PL maps and key device performance metrics.
From: Performance-limiting nanoscale trap clusters at grain junctions in halide perovskites
PL maps were acquired using a pulsed 404-nm laser (repetition rate 2 MHz), focused through an objective lens (100× magnification, 0.9 NA) with an average power of 1.3 nW (~6 suns). a, PL map of a (Cs0.05FA0.78MA0.17)Pb(I0.83Br0.17)3 cation film deposited on a SiN window. b, PL map of a (Cs0.05FA0.78MA0.17)Pb(I0.83Br0.17)3 film in a full device stack (ITO/PTAA/PFN-P2/perovskite/PCBM/BCP/Ag). Both PL maps exhibit similar spatial variations in luminescent properties. c, Top-view SEM image of film deposited on SiN. d, Top-view SEM image of film deposited on ITO showing similar morphology and grain size to c. e, Performance metrics of a solar cell fabricated from the same material sample batch as a–d. FF, fill factor; Jsc, short-circuit current density; PCE, power conversion efficiency; PSK, perovskite; Voc, open-circuit voltage.
