Extended Data Fig. 2: Topography of unbuckled regions in the G/NbSe2 sample.
From: Evidence of flat bands and correlated states in buckled graphene superlattices
a, Main panel, STM topography of a flat (unbuckled) region of the G/NbSe2 surface far from the ridges. Inset, dI/dV spectrum from the region shown in the main panel (Vb = 0.5 V, I = 30 pA). b, Atomic-resolution view of G/NbSe2 in a (Vb = −0.3 V, I = 30 pA). c, Same as a but from a flat region of the G/hBN sample. Inset, dI/dV spectra of flat G/hBN for conditions of electron-doping (green trace) and hole-doping (red trace); Vb = −0.3 V, I = 20 pA.
