Extended Data Fig. 12: FGFET TEM cross-section.
From: Logic-in-memory based on an atomically thin semiconductor
a, Wide-field view of the device fabricated using the logic-in-memory process. b, Magnified view of the contact area boxed in a. c, Cross-section image of the gate stack consisting of (from bottom to top) Pt bottom gate, HfO2 blocking oxide, Pt floating gate, HfO2 tunnel oxide. The MoS2 2D channel is on top of the gate stack.
