Extended Data Fig. 2: Additional characteristics of MoS2 FGFETs.
From: Logic-in-memory based on an atomically thin semiconductor
a, Device variability. IDS versus VG curves for six different devices on the same die. b, Fresh IDS versus VG curves, corresponding to the first VG sweep carried out on these devices. Maximal gate voltage ±VG,MAX (corresponding to VPROG) is insufficient for inducing charge transfer into the floating gate memory. This shows the behaviour of the FGFET in the initial state. c, IDS versus VG for different values of VDS (red curve, 50 mV; blue curve, 100 mV; green curve, 250 mV; orange curve, 500 mV). The progressive increase of the current without a decrease in the memory window demonstrates that the memory effect is not due to capacitive charges in the contacts. d, IDS versus VG for different sweep rates. The decrease of the memory window is a function of the sweep rate. The decrease is most probably a result of charge dynamics limiting the charging and discharging of the floating gate.
