Extended Data Fig. 7: Monolayer MoS₂ transistors with very high I_ON.

a, Transfer characteristics of a 35-nm L_CH Bi–MoS₂ FET. b, c, Transfer and output characteristics of a 50-nm L_CH Bi–MoS₂ FET. d, Output characteristics of a 120-nm L_CH Bi–MoS₂ FET. The excellent current-delivery capacities represent, to our knowledge, new records for monolayer MoS₂ at these device dimensions, outperform thicker TMD devices, and are comparable to three-dimensional semiconductor devices such as 90-nm node-strained Si and AlGaAs/InGaAs HEMT transistors with similar channel lengths^39,40,46. Note that the required drain voltage for the ohmic Bi–monolayer MoS₂ FET to achieve a high I_ON is relatively small compared to previously reported high-performance TMD transistors (that is, typically V_DS > 2 V with a thicker channel thickness)^{18,22,30,31,32,33,34,42,43,44,45}. Inset, optical microscopic image of the device. e, Semi-logarithmic plot of the transfer characteristic of a different Bi–MoS₂ FET showing an excellent I_ON/I_OFF ratio of 10⁸. Insets, SEM image of a representative 150-nm L_CH Bi-contacted monolayer MoS₂ FET on 100-nm-thick SiN_x and its channel region. f, Output characteristics of the same Bi–MoS₂ transistor as in e. The drain current saturates at a V_DS of ~1.5 V and scales linearly with the gate voltage, which suggests that the electrons travelling in the monolayer MoS₂ channel reach its saturation velocity. The gate dielectrics of devices presented in this figure are 100-nm SiN_x.