Extended Data Fig. 2: Topological Chern insulator state in MnBi2Te4.
From: Layer Hall effect in a 2D topological axion antiferromagnet

a, Microscope image of the 6SL MnBi2Te4 device presented in the main text. The circuit for our transport measurements is noted. b, c, Longitudinal Rxx (c) and transverse (Hall) resistance Ryx (b) as a function of VBG and B. d, Rxx and Ryx versus VBG at −9 T.