Extended Data Fig. 3: Electric field dependence of the layer Hall effect in 6SL MnBi2Te4.
From: Layer Hall effect in a 2D topological axion antiferromagnet
a, The AHE conductivity \({\sigma }_{xy}^{{\rm{AHE}}}\) as a function of electric field. The charge density n is set in the hole-doped regime (n = −1.4 × 1012 cm−2). b, Same as a but n is set in the electron-doped regime (n = +1.5 × 1012 cm−2). c, d, First-principles calculated AHE conductivity \({\sigma }_{xy}^{{\rm{AHE}}}\) as a function of electric field. c, Fermi level is set in the valence band (−10 meV). d, Fermi level is set in the conduction band (+30 meV).
