Extended Data Fig. 8: Comparison between along-wire and across-wire transport.

a, Illustration of tWTe₂ moiré stripes on the electrodes (top view). b, Illustration of transport along wires. At low T, the along-wire transport is dominated by contact resistance, i.e., tunnelling from the metal (FL) to the moiré wires (LL). c, Illustration of the across-wire transport, where the dominant resistance is due to interwire tunnelling in the stripe regime (i.e., LL to LL tunnelling). d, Along-wire two-probe conductance G as a function of T, plotted in log–log scale at a selected gate parameter. A power-law fit (solid line) to the low T data is shown. e, Differential conductance dI/dV taken under the along-wire transport configuration as a function of d.c. bias V at different T. The dashed line indicates a power-law trend. The dot-dash line indicates a deviation from the trend at high bias. Note that distortions, strain, unintentional doing and other interface effects occur at the moiré in the contact regime, which could cause the deviation. f & g, the same plot for data taken from the across-wire transport (the same data as Fig. 2c, d), exhibiting a more robust power-law behaviour to higher bias and T. This can be understood as the dominant resistance in the across-wire transport comes from the tWTe₂ channel regime, which is more uniform compared to the contact regime. Data were taken from device no. 1 in cooldown no. 1.