Fig. 2: TCAD simulation of the operation of the OBJT device.
a, Congruence of simulation and measurement on the basis of the experimental data from Fig. 1g. The simulation is tuned to reproduce IV characteristics of the emitter–collector and emitter–base (inset) individually. b, The geometry and current density distribution for an exemplary configuration of the OBJT as given by TCAD simulations. c, Field strength of the internal electric field in a lateral direction for different distances between adjacent base electrodes at VBE = VCE = −3 V. The inset shows a close-up view of the panel for clarity. d, Simulated maximum differential amplification with different widths of the base electrode LB. e, Simulated maximum differential amplification with hypothetical lateral offset between the end of the base electrode and the start of the emitter electrode LBE. f, Simulated maximum differential amplification with different distances between adjacent base electrodes LBB (all other parameters were kept constant in each set of simulations). The insets show the geometry of LB, LBE and LBB in the OBJT device. The parameters used are summarized in Supplementary Table 1.
