Extended Data Fig. 6: Vertical charge transport analysis.
(a) SCLC analysis of charge carrier mobility of orthorhombic spherulite films in vertical direction (p-type doped layers at bottom and top electrode for injection). The SCLC regime was extracted from devices with 400nm and 600nm thickness with eight devices per thickness of varying active area. The error bars denote the standard deviation calculated from multiple devices and different device active areas (the thinner devices show a larger spread). The resulting mobility is calculated from the 1/L³-dependence of the Mott Gurney law. The uncertainty of the value is based upon the variation measured from the individual devices. The inset shows the SCLC fittings as shown in the Fig. 1e. (b) IV characteristic of orthorhombic platelets crystals in vertical direction with different concentrations of the p-dopant F6-TCNNQ: Stack (inset) consists of 30 nm of undoped seed and 370 nm of doped bulk film between Au-electrodes. Crystals are grown on 5nm TAPC as sublayer.
