Extended Data Fig. 7: Magnetic properties of the MBE-grown Mn3Sn film.
From: Perpendicular full switching of chiral antiferromagnetic order by current

a, Field dependence of the magnetization M at 300 K measured in the perpendicular direction of the MgO(110)-substrate/W(7 nm)/Mn3Sn(30 nm)/MgO(5 nm) stack. b, Magnified view of the field dependence of M presented in the panel a. c, Temperature dependence of the remnant M of the MgO(110)-substrate/W(7 nm)/Mn3Sn(30 nm)/MgO(5 nm) film at T = 150-300 K, which is measured from 300 K to 150 K on cooling after the demagnetization process (a field of μ0H = 7 T is applied perpendicular to the film surface and subsequently the field is decreased down to 0 T at 300 K).