Extended Data Fig. 8: Experimental conditions and bias field dependence of the electrical switching of the chiral AF order of Mn3Sn.
From: Perpendicular full switching of chiral antiferromagnetic order by current
a, Sequence used for the electrical switching measurements. A 100-ms-pulse write current Iwrite followed by a d.c. read current of Iread = 0.2 mA is applied, where a wait time of 600 ms is inserted after turning off the write current and before measuring the Hall voltage VH. b, Bias-field dependence of the switching volume fraction ΔVHcurrent/|ΔVHfield| of the W/Mn3Sn devices at room temperature. Here ΔVHcurrent and ΔVHfield are the magnitude of the current- and field-induced switching of the Hall voltage, respectively. The field is applied along the x direction parallel to the electrical current. c, Angular (φ) dependence of the switching volume fraction ΔVHcurrent(φ)/|ΔVHfield| for the W/Mn3Sn devices with γ = +40 degrees. ΔVHcurrent(φ) is estimated under the bias field with the azimuthal angle φ. The vertical broken lines indicate φ = 130 and 310 degrees.
