Extended Data Fig. 8: Post-treatments of the sol–gel SiO2-coated nLEDs.
From: Highly efficient blue InGaN nanoscale light-emitting diodes
a, PL decay traces of the nLEDs averaged over the areas indicated in the images below. The carrier lifetime increased after baking the sample at 250 °C for 1 h. b, The EL efficiency versus current density of the nLEDs in a pixel structure. The EL performance is the same before and after the annealing. At a high current injection, the EL efficiency is slightly increased. c, Comparison of outgassing between the SiO2 layers using pyrolysis–gas chromatography–mass spectrometry with evolved gas analysis–mass spectrometry.
