Extended Data Fig. 2: Comparison between thermal ALD SiO2 and plasma-enhanced ALD SiO2 passivation.
From: Highly efficient blue InGaN nanoscale light-emitting diodes
a, EQE curves for the nLEDs with the 60-nm-thick SiO2 passivation layer deposited with thermal ALD and plasma-enhanced ALD processes. b, Thermal desorption spectroscopy (TDS) for measuring H2 outgassing. c, X-ray reflectivity measurement for thin-film density. d, XPS core-level spectra for Si 2p and O 1s obtained from a 20-nm-thick SiO2 layer deposited on a Si substrate with thermal ALD and plasma-assisted ALD processes.
