Extended Data Fig. 3: Device Characterizations.
From: Quantum cascade of correlated phases in trigonally warped bilayer graphene
a, Fan diagram at E = 0 V/nm. The QH states 𝜈 = −4, −2, and 2 are traced as function of the magnetic field and the charge carrier density. b, Derivative of the conductance in a. c, Conductance as a function of the charge carrier density and the electric field at B = 2 T. Transitions induced by the electric field are marked by dashed circles. (In a–c, Integer QH states are labelled by numerals.) d, Conductance as a function of the electric field and the magnetic field at 𝜈 = 0. The phase transitions between the canted antiferromagnetic (CAF) and fully layer polarized (FLP) phases are indicated by arrows. e, Conductance as a function of the charge carrier density at E = 0.08 V/nm and B = 2 T (extracted from data in c). Here a contact resistance of 7800 Ω was subtracted. f, Conductance as a function of the top and bottom-gate voltages at B = 0 T in the space of −7 x 1011 cm−2 < n < 7 x 1011 cm−2 and −0.7 V/nm < E < 0.7 V/nm. g, Conductance as a function of charge carrier density and magnetic field at E = 0.6 V/nm. A contact resistance of Rc = 2000 Ω + 3000 Ω/T x B (T) was subtracted from the measured values. The data are the same measurements presented in Fig 1c of the main manuscript.
