Extended Data Fig 6: Electrostriction as a function modulation length for heterostructures with different crystal structures.
From: Atomically engineered interfaces yield extraordinary electrostriction
a. fluorite: CGO20/YSZ8; b. perovskite: SFTO10/BYZO10; c. garnet: GGMO10/LSFO10; d. spinel: MGMO10/ZAZO10. The chemical formula for YSZ8, SFTO10, BYZO10, GGMO10, LSFO10, MGMO10 and ZAZO10 are \(({{\rm{Zr}}}_{0.92}^{4+}{{\rm{Y}}}_{0.08}^{3+}{){\rm{O}}}_{1.96}^{2-}\), \({{\rm{Sr}}}_{1.0}^{2+}{({\rm{Fe}}}_{0.1}^{3+}{{{\rm{Ti}}}_{0.9}^{4+}){\rm{O}}}_{2.95}^{2-}\), \({{\rm{Ba}}}_{1.0}^{2+}{({\rm{Y}}}_{0.1}^{3+}{{{\rm{Zr}}}_{0.9}^{4+}){\rm{O}}}_{2.95}^{2-}\), \({{\rm{Gd}}}_{3.0}^{3+}({{\rm{Ga}}}_{4.5}^{3+}{{{\rm{Mg}}}_{0.5}^{2+}){\rm{O}}}_{11.75}^{2-}\), \({({\rm{La}}}_{2.5}^{3+}{{\rm{Sr}}}_{0.5}^{2+}){{{\rm{Fe}}}_{5.0}^{3+}{\rm{O}}}_{11.75}^{2-}\), \({{\rm{Mg}}}_{1.0}^{2+}({{\rm{Ga}}}_{1.8}^{3+}{{{\rm{Mg}}}_{0.2}^{2+}){\rm{O}}}_{3.90}^{2-}\), \({{\rm{Zn}}}_{1.0}^{2+}({{\rm{Al}}}_{1.8}^{3+}{{{\rm{Zn}}}_{0.2}^{2+}){\rm{O}}}_{3.90}^{2-}\), respectively. The defects are generated at random within the heterostructures. The insets schematically show the unit cell of the ideal structure. All the lattice parameters are allowed to relax during the application of the electrical field. Note that the optimal modulation length yielding maximized electrostriction coefficient (Mxx) is material dependent.
