Fig. 3: Temperature-dependent resistance of LuH2±xNy at different pressures up to 6.3 GPa.
a, Temperature dependence of the electrical resistance of LuH2±xNy from 10 K to 350 K with pressures up to 6.3 GPa for run 1 (diamond-anvil cell (DAC) filled with polycrystalline pieces). The weak upturn of the R(T) curve in the low-temperature region may be because of the hopping of electrons through a large inter-grain spacing or grain boundaries when the grains are compacted loosely in the DAC space. This explanation is supported by the weakening and absence of this low-temperature upturn when the pressure increases. b, Temperature dependence of the electrical resistance of LuH2±xNy up to 2.7 GPa for run 2 with the DAC filled with the powder of the sample. Now the low-temperature upturn disappears. c, Temperature dependence of the electrical resistance of LuH2±xNy measured at different magnetic fields up to 90 kOe at 1.6 GPa for run 1 (DAC filled with polycrystalline pieces).
