Fig. 1: Vertical scaling versus in-plane scaling of semiconducting circuits.

a, Schematic illustration of the routes of scaling in Si and vdW technologies. b, Molecular structure of a pristine MoS₂ layer. The difference in charge density distributions of slight electron doping with respect to a neutral layer for an isosurface of 10 μe Bohr⁻³ above the Fermi level is superimposed on its molecular model. c, Schematic diagram of the n-type MoS₂ in the conventional pristine state, with the Fermi level (red solid line) positioned in the vicinity of the conduction band minimum (CBM) in MoS₂. d, Same plot of differential charge density distributions as b, but in a MoS₂–CrOCl heterostructure. In b and d, the charge carrier types of electrons and holes are marked in pink and green, respectively. The atom-symbols used in b and d are illustrated in the bottom part of b. Clear n-type behaviour on electron doping can be seen in b, while in the MoS₂–CrOCl heterostructure case in d, most of the doped electrons are transferred to the CrOCl side. e, Schematic band alignment diagram of the MoS₂–CrOCl heterostructure under finite vertical negative electric field (corresponding to the negative bottom gate voltage in our experimental configurations), indicating the realization of a p-type semiconducting MoS₂ with the Fermi level (red solid line) positioned in the vicinity of the valence band maximum (VBM) in MoS₂.