Extended Data Fig. 8: Transfer characteristics of a typical MoS₂/CrOCl p-FET at different temperatures.

Transfer characteristics measured at (a) V_ds = 1 V and (c) V_ds = 0.1 V, with their corresponding extracted field effect mobility (both estimated at a fixed gate voltage of V_bg = −10 V) as a function of temperature shown in (b) and (d), respectively. We have to admit that the contact resistance of these p-FETs has not yet reached a well-defined Ohmic contact, and there seem to still exist a contact barrier. As can be seen that while the device at high bias (V_ds = 1 V) show metallic behavior (higher conductivity at lower temperatures, at large-enough negative gate voltages) with increasing hole mobility upon cooling (Extended Data Fig. 8a-b), its hole mobility at low bias (V_ds = 0.1 V) significantly decreases at temperatures below 200 K (Extended Data Fig. 8c-d). There is still room for further optimization in the future development of Ohmic contacts at low temperatures for the p-FETs devices based on the technique reported in this work.