Extended Data Fig. 4: Air stability of the p-doped devices.
From: Van der Waals polarity-engineered 3D integration of 2D complementary logic
To examine the air stability of the as prepared p-FETs of MoS2/CrOCl heterostructure, field effect curves of a typical device before (red line), after two months (yellow line), after six months (light blue line), and after 12 months (dark blue line) exposed to air, are shown. It is seen that the performance of the device exhibits negligible changes over a time duration of one year.
